l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Automotive.

HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 4.9mΩ S S (Pin 2, 3, 5, 6, 7) G (Pin 1) ID = 120A D2Pak 7 Pin Base .

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

AUIRF1405ZS

AUIRF1405ZL

AUIRF1404

AUIRF1404L

AUIRF1404S

AUIRF1404Z

AUIRF1404ZL

AUIRF1404ZS

AUIRF1010EZ

AUIRF1010EZL

AUIRF1010EZS

AUIRF1010Z

AUIRF1010ZL

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