S
* dv/dt controlled by RG
* ISD controlled by Duty Factor "D"
* D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Dr.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

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