logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

30ETH06S International Rectifier

30ETH06S Hyperfast Rectifier

30ETH06S Avg. rating / M : star-13

datasheet Download

30ETH06S Datasheet

Features and benefits






• Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Dual Diode Center Tap trr = 2.

Application

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast re.

Image gallery

30ETH06S 30ETH06S 30ETH06S

TAGS
30ETH06S
Hyperfast
Rectifier
30ETH06
30ETH06-1
30ETH06-1PBF
International Rectifier
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy