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2N7581U2 - POWER MOSFET

General Description

IR HiRel R6 S-line technology provides high performance power MOSFETs for space applications.

Key Features

  • Low RDS(on).
  • Fast Switching.
  • Single Event Effect (SEE) Hardened.
  • Low Total Gate Charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67164 100 kRads(Si) IRHNA63164 300 kRads(Si) RDS(on) 0.018 0.018 ID 56A* 56A* PD-96959C IRHNA67164 2N7581U2 150V, N-CHANNEL R6 TECHNOLOGY SMD-2 Description IR HiRel R6 S-line technology provides high performance power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer LET up to 90 (MeV/(mg/cm2).Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.