IFN112 Datasheet | InterFET Corporation

Features - Inter FET N0132H Geometry - Low Noise: 1.5 n V/√Hz Typical - High Gain: 12m S Typical - Ro HS pliant - SMT, TH, and Bare Die Package options. Applications - Low-Noise, High Gain - Replacement for Japanese 2SK112 Description The -50V Inter FET IFN112 is a low noise high gain replacement for the Japanese 2SK112 JFET. Gate leakages are typically less than 50p A at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-18 Bottom View Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage Forward Transconductance Ordering Information Custom Part and Binning Options Available Part Number Description Through-Hole PN112 Through-Hole SMP112 Surface Mount 7“ Tape and Reel: Max 3,000 Pieces SMP112TR 13” Tape and Reel: Max 9,000...