Datasheet Details
| Part number | IFN112 |
|---|---|
| Manufacturer | InterFET Corporation |
| File Size | 578.10 KB |
| Description | N-Channel JFET |
| Datasheet |
 IFN112 Datasheet
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General Description
The -50V InterFET IFN112 is a low noise high gain replacement for the Japanese 2SK112 JFET.
Gate leakages are typically less than 50pA at room temperatures.
The TO-18 package is hermetically sealed and suitable for military applications.
Key Features
- InterFET N0132H Geometry.
- Low Noise: 1.5 nV/√Hz Typical.
- High Gain: 12mS Typical.
- RoHS Compliant.
- SMT, TH, and Bare Die Package options.