N3600L geometry equivalent, process geometry.
* Low Noise: 0.5 nV/√Hz Typical
* Typical Breakdown Voltage: -22V
* Low On Resistance: 2.0Ω Typical
* Die Size: 1838um X 1838um X 203um
* Oversized Bo.
* Large Capacitance Detector Pre-Amplifier
* Matched Pair Applications
* Custom Part Options
Description
The.
The InterFET N3600L Geometry is ideal for low noise high gain applications.
Geometry Top View
S-D
S-D S-D G
3600
G D-S D-S
D-S
Standard Parts
* IF3601
* IF3602
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS .
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