N0001H geometry equivalent, process geometry.
* Low Input Capacitance: 2.0pF Typical
* Low Gate Leakage: 0.5pA Typical
* High Breakdown Voltage: -60V Typical
* High Input Impedance
* Small Die: 36.
* Small Signal Amplifier
* Ultrahigh Impedance Pre-Amplifier
* Pico-Amp Diodes (PAD)
* High Input Impeda.
The InterFET N0001H Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for high frequency applications.
Geometry Top View
01
G
S-D
S-D
G
Test Pattern
Standard Parts
* 2N4117/A, 2N4118/A,.
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