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2N5198 - N-Channel Dual Silicon Junction Field-Effect Transistor

Download the 2N5198 datasheet PDF. This datasheet also covers the 2N5196 variant, as both devices belong to the same n-channel dual silicon junction field-effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5196-InterFET.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5198
Manufacturer InterFET
File Size 408.83 KB
Description N-Channel Dual Silicon Junction Field-Effect Transistor
Datasheet download datasheet 2N5198 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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8/2014 2N5196, 2N5197, 2N5198, 2N5199 N-Channel Dual Silicon Junction Field-Effect Transistor ∙ Differencial Inputs At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (pulsed) IGSS VGS(OFF) IDSS Dynamic Electrical Characteristics Common-Source Forward Transconductance gfs Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage ~eN Differencial Gate-Source Voltage Differencial Gate Source Voltage with Temperature (VGS1-VGS2) Δ│VGS1-VGS2│ ΔT Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Dev