2N4117A Datasheet | InterFET

Features - Inter FET N0001H Geometry - Low gate leakage: 120f A typical @20V - Low CISS: 1.8p F typical - Typical BVGSS: -60V - High radiation tolerance - Ro HS, REACH, CMR pliant - Custom test and binning options available - SMT, TH, and bare die package options - Edge case SPICE modeling: Inter FET SPICE TO-72 Bottom View Gate 3 S/D 2 4 Case 1 S/D SOT23 Top View Industry Standard Crosses S/D 1 - SST4117, SST4118, SST4119, MMBF4117, MMBF4118, MMBF4119, 2N4117, 2N4118, 2N4119, VCR7N S/D 2 Inter FET Similar Parts - SMP4117-8-9, PN4117-8-9, SMPVCR7N, PNVCR7N Inter FET Dual Parts - IFNU421-2-3-4-5-6 Gate 3 3 Gate TO-92 Bottom View Applications S/D 2 - General: Buffers; Signal mixers; Femtoampere diodes S/D 1 - Military/Aero: Radar; munications; Satellites - Medical: Imaging systems; Monitors; Ultrasound NOTE: S/D pins are interchangeable Source Drain connections Description The -50V Inter FET 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications. Gate leakages are typically 120f A at room temperatures. Proprietary Inter FET processes yield exceptionally high radiation tolerance. Parts can be connected for femtoampere diode applications. Ordering Information Custom Part and Binning Options Available Part Number Description 2N4117; 2N4118; 2N4119 2N4117A; 2N4118A;...