2N3459
Features
- Inter FET N0016H Geometry
- Inter FET N0032H Geometry (2N3458)
- Low Noise: 5 n V/√Hz Typical
- High Gain: 7.5m S Typical (2N3458)
- Low Cutoff Voltage: 2N3460 < 1.8V
- Ro HS pliant
- SMT, TH, and Bare Die Package options.
Applications
- General Purpose Amplifiers
Description
The -50V Inter FET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 10p A at room temperatures. The 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for military applications.
Gate/Case Drain 2 Source
TO-18 Bottom View
Source 1 Drain 2
SOT23 Top View 3 Gate
Gate 3 Drain 2 Source 1
TO-92 Bottom View
Product Summary
Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance
2N3458 Min -50 3
-7.8 (Max) 2.5
2N3459 Min -50 0.8
-3.4...
