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JS28F128J3D-75 - Numonyx Embedded Flash Memory

Download the JS28F128J3D-75 datasheet PDF. This datasheet also covers the JS28F640J3D-75 variant, as both devices belong to the same numonyx embedded flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

at any time, without notice.

Features

  • Architecture.
  • High-density symmetrical 128-Kbyte blocks.
  • 128 Mbit (128 blocks).
  • 64 Mbit (64 blocks).
  • 32 Mbit (32 blocks) Performance.
  • 75 ns Initial Access Speed (128/64/32 -Mbit densities).
  • 25 ns 8-word and 4-word Asynchronous page-mode reads.
  • 32-Byte Write buffer.
  • 4 µs per Byte Effective programming time System Voltage and Power.
  • VCC = 2.7 V to 3.6 V.
  • VCCQ = 2.7 V to 3.6 V.
  • Security.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JS28F640J3D-75_IntelCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number JS28F128J3D-75
Manufacturer Intel Corporation
File Size 639.54 KB
Description Numonyx Embedded Flash Memory
Datasheet download datasheet JS28F128J3D-75 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Intel® Embedded Flash Memory (J3 v. D) (32, 64, and 128 Mbit) Datasheet Product Features ■ ■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode reads — 32-Byte Write buffer —4 µs per Byte Effective programming time System Voltage and Power — VCC = 2.7 V to 3.6 V — VCCQ = 2.7 V to 3.
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