JS29F08G08CANB1
JS29F08G08CANB1 is SD74 NAND Flash Memory manufactured by Intel.
- Part of the JS29F16G08FANB1 comparator family.
- Part of the JS29F16G08FANB1 comparator family.
Features
Single-level cell (SLC) Technology Organization:
- Page size: x8: 2,112 bytes (2,048 + 64 bytes)
- Block size: 64 pages (128K + 4K bytes)
- Plane size: 2,048 blocks
- Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks Read performance:
- Random read: 25µs (MAX)
- Sequential read: 25ns (MIN) Write performance:
- Page program: 220µs (TYP)
- Block erase: 1.5ms (TYP) Data Retention:
- 10 years Endurance:
- 100,000 PROGRAM/ERASE cycles First block (block address 00h):
- Guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles Vcc:
- 2.7V
- 3.6V Operating Temperature:
- - 25 C to 85 C mand set:
- Industry-standard basic NAND Flash mand set o o
JS29F04G08AANB1, JS29F08G08CANB1, JS29F16G08FANB1
Advanced mand Set:
- PROGRAM PAGE CACHE MODE
- PAGE READ CACHE MODE
- One-time programmable (OTP) mands
- Two-plane mands
- Interleaved die operation
- READ UNIQUE ID (contact factory)
- READ ID2 (contact factory)
- Internal Data Move: Operations supported within the plane from which data is read Operation status byte:
- Provides software method for detecting:
- Operation pletion
- Pass/fail condition
- Write-protect status Ready/busy# (R/B#) signal:
- Provides a hardware method for detecting PROGRAM or ERASE cycle pletion WP# signal:
- Write protect entire device RESET:
- Required after power-up Package Types:
- 48-pin TSOP Type 1
- 48-pin TSOP OCPL Type 1 Configuration:
# of Die
1 2 4
# of CE# # of R/B#
1 2 2 1 2...
