38F2240WWZ0Q1 - RD38F2240

Intel

General Description

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Key Features

Datasheet.
Device Architecture.
Flash Density: 32-Mbit, 64-Mbit.
Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit.
Top, Bottom or Dual flash parameter configuration.
Device Voltage.
Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V.
RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V.
Device Packaging.
88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm.
PSRAM Performance.
7.

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Datasheet Details

Part number	38F2240WWZ0Q1
Manufacturer	Intel
File Size	430.65 KB
Description	RD38F2240
Datasheet	38F2240WWZ0Q1 Datasheet

Full PDF Text Transcription for 38F2240WWZ0Q1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 38F2240WWZ0Q1. For precise diagrams, and layout, please refer to the original PDF.

Intel® Wireless Flash Memory (W18/W30 SCSP) 32WQ and 64WQ Family with Asynchronous RAM Product Features Datasheet ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit ...

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res Datasheet ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit — Top, Bottom or Dual flash parameter configuration ■ Device Voltage — Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V — RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V ■ Device Packaging — 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm ■ PSRAM Performance — 70 ns initial access, 25 ns async page reads at 1.8 V I/O — 70 ns initial access async PSRAM at 1.8V I/O — 88 ns initial access, 30 ns async page reads at 1.8 V I/O — 85 ns initial access, 35 ns async

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