IS65C256AL Datasheet | ISSI

IS65C256AL IS62C256AL 32K x 8 LOW POWER CMOS STATIC RAM .. ISSI ® MARCH 2006 Features - Access time: 25 ns, 45 ns - Low active power: 200 m W (typical) - Low standby power - 150 µW (typical) CMOS standby - 15 m W (typical) operating - Fully static operation: no clock or refresh required - TTL patible inputs and outputs - Single 5V power supply - Lead-free available - Industrial and Automotive temperatures available DESCRIPTION The ISSI IS62C256AL/IS65C256AL is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's high-performance, low power CMOS technology. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 µW (typical) at CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Select (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C256AL/IS65C256AL is pin patible with other 32Kx8 SRAMs in plastic SOP or TSOP (Type I) package. FUNCTIONAL BLOCK DIAGRAM A0-A14 DECODER 32K X 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE OE WE CONTROL CIRCUIT Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. - .issi. -...