IS62WV102416BLL Datasheet PDF (1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM) | Download Integrated Silicon Solution IS62WV102416BLL

IS62WV102416BLL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

This page provides the datasheet information for the IS62WV102416BLL, a member of the IS62WV102416ALL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM family.

Description

are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

High-speed access times: 25, 35 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CS1 and OE options.
CS1 power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) sp.

Datasheet Details

Part number	IS62WV102416BLL
Manufacturer	Integrated Silicon Solution
File Size	375.47 KB
Description	1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS62WV102416BLL Datasheet
Additional preview pages of the IS62WV102416BLL datasheet.

📁 Similar Datasheet

IS62WV102416DALL - ULTRA LOW POWER & LOW POWER CMOS STATIC RAM (ISSI)

IS62WV102416DBLL - ULTRA LOW POWER & LOW POWER CMOS STATIC RAM (ISSI)

IS62WV102416EALL - ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS62WV102416EBLL - ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS62WV102416FALL - ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS62WV102416FBLL - ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS62WV102416GALL - ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS62WV102416GBLL - ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS62WV10248DALL - ULTRA LOW POWER CMOS STATIC RAM (ISSI)

IS62WV10248DBLL - ULTRA LOW POWER CMOS STATIC RAM (ISSI)

Full PDF Text Transcription

Click to expand full text

IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) speed = 25ns for VDD 2.4V to 3.

Published: Mar 8, 2014 |