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IS61SF12832 - (IS61SF12832 / IS61SF12836) 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM

Description

synchronous static RAM designed to provide a burstable, high-performance memory for high speed networking and communication applications.

It is organized as 131,072 words by 32 bits or 36 bits, fabricated with ISSI's advanced CMOS technology.

Features

  • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 12 ns.
  • Internal self-timed write cycle.
  • Individual Byte Write Control and Global Write.
  • Clock controlled, registered address, data inputs and control signals.
  • Pentium™ or linear burst sequence control using MODE input.
  • Three chip enables for simple depth expansion and address pipelining.
  • Common data inputs and data outputs.
  • JEDEC 100-Pin TQFP and 119-pin PBGA package.

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Other Datasheets by Integrated Silicon Solution
  • IS61SF12836 - (IS61SF12832 / IS61SF12836) 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
  • IS61C1024 - 128K x 8 HIGH-SPEED CMOS STATIC RAM
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Full PDF Text Transcription

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IS61SF12832 IS61SF12836 128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 12 ns • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data inputs and control signals • Pentium™ or linear burst sequence control using MODE input • Three chip enables for simple depth expansion and address pipelining • Common data inputs and data outputs • JEDEC 100-Pin TQFP and 119-pin PBGA package • Single +3.3V +10%, –5% power supply • Power-down snooze mode www.DataSheet4U.
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