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IS61LV12816LL - 128K x 16 HIGH-SPEED CMOS STATIC RAM

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General Description

The ISSI IS61LV12816L/IS61LV12816LL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

Overview

IS61LV12816L IS61LV12816LL ISSI® 128K x 16 HIGH-SPEED CMOS STATIC RAM PRELIMINARYINFORMATION WITH 3.

Key Features

  • High-speed access time: IS61LV12816L: 8, 10 ns IS61LV12816LL: 12, 15 ns.
  • Operating Current: IS61LV12816L: 50mA (typ. ) IS61LV12816LL: 25mA (typ. ).
  • Stand by Current: IS61LV12816L: 500µA (typ. ) IS61LV12816LL: 250µA(typ. ).
  • TTL and CMOS compatible interface levels.
  • Single 3.3V power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial tempe.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Circuit Solution Logo IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Circuit Solution
ISSI Logo IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM ISSI

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