IS61LV12816L Datasheet PDF - Integrated Silicon Solution 128K x 16 HIGH-SPEED CMOS STATIC RAM Specs

IS61LV12816L - 128K x 16 HIGH-SPEED CMOS STATIC RAM

Datasheet Summary

Description

static RAM organized as 131,072 words by 16 bits.

technology.

Features

High-speed access time: 8, 10 ns.
Operating Current: 50mA (typ. ).
Stand by Current: 700µA (typ. ).
TTL and CMOS compatible interface levels.
Single 3.3V power supply.
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.
Lead-free available.

Datasheet Details

Part number	IS61LV12816L
Manufacturer	Integrated Silicon Solution
File Size	108.90 KB
Description	128K x 16 HIGH-SPEED CMOS STATIC RAM
Datasheet	IS61LV12816L Datasheet
Additional preview pages of the IS61LV12816L datasheet.

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Full PDF Text Transcription

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IS61LV12816L 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY ISSI® OCTOBER 2005 FEATURES • High-speed access time: 8, 10 ns • Operating Current: 50mA (typ.) • Stand by Current: 700µA (typ.) • TTL and CMOS compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

Published: Mar 10, 2015 |