IS61LV12816L - 128K x 16 HIGH-SPEED CMOS STATIC RAM

Product Overview

Integrated Silicon Solution

Datasheet Details

Part number	IS61LV12816L
Manufacturer	Integrated Silicon Solution
File Size	108.90 KB
Description	128K x 16 HIGH-SPEED CMOS STATIC RAM
Datasheet	IS61LV12816L Datasheet
Additional preview pages of the IS61LV12816L datasheet.

Product details

Description

The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits.It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by using Chip En

Features

High-speed access time: 8, 10 ns.
Operating Current: 50mA (typ. ).
Stand by Current: 700µA (typ. ).
TTL and CMOS compatible interface levels.
Single 3.3V power supply.
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.
Lead-free available.

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Other Datasheets by Integrated Silicon Solution

IS61LV12816LL - 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV12824 - 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV2568L - 256K x 8 HIGH-SPEED CMOS STATIC RAM
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Published: Mar 10, 2015 |