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IS61DDP2B41M18A2 - 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM

Download the IS61DDP2B41M18A2 datasheet PDF (IS61DDP2B41M18A included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 18mb ddr-iip(burst 4) cio synchronous sram.

Description

512Kx36 and 1Mx18 configuration available.

On-chip Delay-Locked Loop (DLL) for wide data valid window.

Common I/O read and write ports.

Synchronous pipeline read with self-timed late write operation.

Double Data Rate (DDR) interface for read and write input ports.

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Note: The manufacturer provides a single datasheet file (IS61DDP2B41M18A-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IS61DDP2B41M18A/A1/A2 IS61DDP2B451236A/A1/A2 1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) ADVANCED INFORMATION JULY 2012 FEATURES DESCRIPTION  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Common I/O read and write ports.  Synchronous pipeline read with self-timed late write operation.  Double Data Rate (DDR) interface for read and write input ports.  2.0 cycle read latency.  Fixed 4-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  +1.8V core power supply and 1.5V to 1.8V VDDQ, used with 0.75 to 0.9V VREF.
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