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IS45S16800E Datasheet 128Mb SYNCHRONOUS DRAM

Manufacturer: ISSI (now Infineon)

Download the IS45S16800E datasheet PDF. This datasheet also includes the IS45S81600E variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS45S81600E-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Overview

IS45S81600E IS45S16800E 1162M8Mxb8S, Y8NMCxH1R6O NOUS DRAM DECEMBER.

Key Features

  • Clock frequency: 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply IS45S81600E Vdd Vddq 3.3V 3.3V IS45S16800E 3.3V 3.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self R.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ISSI Logo IS45S16800F 128Mb SYNCHRONOUS DRAM ISSI

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160C 256 Mb Single Data Rate Synchronous DRAM
IS45S16160D 256-MBIT SYNCHRONOUS DRAM
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM
IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM
IS45S81600E 128Mb SYNCHRONOUS DRAM