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IS41C4100 Datasheet, Integrated Silicon Solution

IS41C4100 mode equivalent, 1meg x 4 (4-mbit) dynamic ram with edo page mode.

IS41C4100 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 179.45KB)

IS41C4100 Datasheet

Features and benefits


* TTL compatible inputs and outputs
* Refresh Interval: 1024 cycles/16 ms
* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
* JEDEC standard pin.

Application

The IS41C4100 and IS41LV4100 are available in a 20-pin, 300-mil SOJ package. KEY TIMING PARAMETERS Parameter Max. RAS .

Description

The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle tim.

Image gallery

IS41C4100 Page 1 IS41C4100 Page 2 IS41C4100 Page 3

TAGS

IS41C4100
1Meg
4-MBIT
DYNAMIC
RAM
WITH
EDO
PAGE
MODE
Integrated Silicon Solution

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