* High-speed access time: — 8, 10, and 12 ns
* CMOS low power operation
* Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by
* TTL compatible inter.

The ISSI IS61LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high.

61LV5128

61LV256

61LV25616AL

61-238-RSGCBKC-B02-ET

610-14-CC-D

610-xx-CC-x

610-xx-CJ-x

610-xx-CS-x

61010

61048

61053

61055

61056

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