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NDB16P - 1Gb (x16) - DDR2 Synchronous DRAM

Key Features

  • such as posted CAS# with additive latency, Write latency = Read latency -1, Off-Chip Driver (OCD) impedance adjustment, and On Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row.

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Datasheet Details

Part number NDB16P
Manufacturer Insignis
File Size 1.60 MB
Description 1Gb (x16) - DDR2 Synchronous DRAM
Datasheet download datasheet NDB16P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1Gb (x16) – DDR2 Synchronous DRAM 64M x 16 bit DDR2 Synchronous DRAM Overview The NDB16P is a high-speed CMOS Double-Data-Rate-Two (DDR2), synchronous dynamic random-access memory (SDRAM) containing 1024 Mbits in a 16-bit wide data I/Os. It is internally configured as an 8-bank DRAM, 8 banks x 8Mb addresses x 16 I/Os. The device is designed to comply with DDR2 DRAM key features such as posted CAS# with additive latency, Write latency = Read latency -1, Off-Chip Driver (OCD) impedance adjustment, and On Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling).