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MX0525 - High Power RF LDMOS FET

Description

The MX0525 is a 250-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1 GHz.

Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, I

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.

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Datasheet preview – MX0525

Datasheet Details

Part number MX0525
Manufacturer Innogration
File Size 347.59 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MX0525 Datasheet
Additional preview pages of the MX0525 datasheet.
Other Datasheets by Innogration

Full PDF Text Transcription

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MX0525 LDMOS TRANSISTOR 250W, 28V High Power RF LDMOS FETs Description The MX0525 is a 250-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1 GHz. Document Number: MX0525 Product Datasheet V1.0 MX0525 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1200 mA, CW. Frequency Gp (dB) P-1dB (W) D@P-1 (%) 1000 MHz 17 250 60 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1500 mA, CW. Freq(MHz) Gain(dB) P-1(W) Eff(%) 30 18.9 107 57.5 100 19.3 204 56.5 150 18.6 195 56.6 200 18.5 166 52.5 250 18.9 141 51.5 300 18.8 159 54.5 350 19.1 166 55.6 400 19.1 155 51.7 450 19.4 170 51.0 512 20.
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