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MX0160VPX - High Power RF LDMOS FET

Datasheet Summary

Description

The MX0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz.

Typical performance(on 1.6-30MHz wideband test board wi

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.

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Datasheet preview – MX0160VPX

Datasheet Details

Part number MX0160VPX
Manufacturer Innogration
File Size 544.56 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MX0160VPX Datasheet
Additional preview pages of the MX0160VPX datasheet.

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Full PDF Text Transcription

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MX0160VPX LDMOS TRANSISTOR Document Number: MX0160VPX Preliminary Datasheet V1.0 550W, 50V High Power RF LDMOS FETs Description The MX0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz. It is the thermally enhancement of its peer MK0160VPX(S) MX0160VPX  Typical performance(on 1.6-30MHz wideband test board with device soldered) VDS=50V,IDQ=1500mA, Signal：2-Tone space 650Hz CW, Freq(MHz) PAVG(W) Gain(dB) η(%) IMD3(dBc) 1.6 150 24.2 38 -35 5 150 24.4 37 -39 10 150 25.0 38 -44 15 150 25.2 38 -44 20 150 24.8 38 -44 25 150 24.1 37 -38 30 150 23.
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