• Part: MQ081K0VP
  • Description: High Power RF LDMOS FET
  • Manufacturer: Innogration
  • Size: 659.17 KB
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Datasheet Summary

MQ081K0VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs Description The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz. - Typical Performance (on innogration demo with device soldered): Frequency:440MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us duty cycle 10% Document Number: MQ081K0VP Preliminary Datasheet V1.0 Features - High Efficiency and Linear Gain Operations - Integrated ESD Protection - Internally Matched for Ease of Use - Large Positive and Negative Gate/Source...