Datasheet Details
| Part number | MQ081K0VP |
|---|---|
| Manufacturer | Innogration |
| File Size | 659.17 KB |
| Description | High Power RF LDMOS FET |
| Datasheet |
 MQ081K0VP Datasheet
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Description
The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz.
Typical Performance (on innogration demo with device soldered): Frequency:440MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C PFeatures
- High Efficiency and Linear Gain Operations.
- Integrated ESD Protection.
- Internally Matched for Ease of Use.
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
- Excellent thermal stability, low HCI drift.
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature R.