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MK0160VPX - High Power RF LDMOS FET

General Description

The MK0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range.

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Datasheet Details

Part number MK0160VPX
Manufacturer Innogration
File Size 676.21 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MK0160VPX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MK0160VPX LDMOS TRANSISTOR Document Number: MK0160VPX Preliminary Datasheet V1.0 550W, 50V High Power RF LDMOS FETs Description The MK0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.2 GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM radio, VHF TV and Aerospace applications. MK0160VPX  Typical performance(on 1.6-30MHz wideband test board with device soldered) VDS=50V,IDQ=1500mA, Signal：2-Tone space 650Hz CW, Freq(MHz) PAVG(W) Gain(dB) η(%) IMD3(dBc) 1.6 150 24.2 38 -35 5 150 24.4 37 -39 10 150 25.0 38 -44 15 150 25.2 38 -44 20 150 24.8 38 -44 25 150 24.1 37 -38 30 150 23.