ITBH09150B2E fet equivalent, high power rf ldmos fet.
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift.
with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station mo.
The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station m.
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