SPW35N60CFD
Key Features
- TM Power Transistor Product Summary V DS R DS(on),max ID 600 V
- New revolutionary high voltage technology
- Intrinsic fast-recovery body diode
- Extremely low reverse recovery charge
- Ultra low gate charge
- Extreme dv /dt rated
- High peak current capability
- Periodic avalanche rated
- Qualified according to JEDEC1) for target applications
