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Infineon Technologies Electronic Components Datasheet

SPD06N60C3 Datasheet

CoolMOS Power Transistor

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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
• Extreme dv /dt rated
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• Improved transconductance
Product Summary
V DS @ T j,max
R DS(on),max
ID
SPD06N60C3
650 V
0.75
6.2 A
PG-TO252
Type
SPD06N60C3
Package
PG-TO252
Ordering Code
Q67040-S4630
Marking
06N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1)
AR
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=3.1 A, V DD=50 V
E AR I D=6.2 A, V DD=50 V
I AR
Drain source voltage slope
dv /dt
I D=6.2 A, V DS=480 V,
T j=125 °C
Gate source voltage
Power dissipation
Operating and storage temperature
Reverse diode dv/dt 7)
V GS static
V GS AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
dv/dt
Rev. 1.4
Page 1
Value
6.2
3.9
18.6
200
0.5
6.2
Unit
A
mJ
A
50 V/ns
±20
±30
74
-55 ... 150
15
V
W
°C
V/ns
2005-10-05


Infineon Technologies Electronic Components Datasheet

SPD06N60C3 Datasheet

CoolMOS Power Transistor

No Preview Available !

SPD06N60C3
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
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R thJA
Soldering temperature *)
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area3)
1.6 mm (0.063 in.)
from case for 10 s
-
-
-
-
- 1.7 K/W
- 75
50 -
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0 V, I D=250 µA
V (BR)DS V GS=0 V, I D=6.2 A
600
-
V GS(th) V DS=V GS, I D=0.26 mA 2.1
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=3.9 A,
T j=25 °C
V GS=10 V, I D=3.9 A,
T j=150 °C
R G f =1 MHz, open drain
g fs
|V DS|>2|I D|R DS(on)max,
I D=3.9 A
-
-
-
-
-
-
-
-
700
3
0.1
-
-
0.68
1.82
1
5.6
-V
-
3.9
1 µA
100
100 nA
0.75
-
-
-S
*) reflow soldering, MSL3
Rev. 1.4
Page 2
2005-10-05


Part Number SPD06N60C3
Description CoolMOS Power Transistor
Maker Infineon Technologies AG
Total Page 11 Pages
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