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CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv /dt rated • Improved transconductance • Fully isolated package (2500 V AC; 1 minute)
Product Summary
V DS @ T j,max
R DS(on),max
I
1) D
SPA06N60C3
650 V 0.75 Ω 6.