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Infineon Technologies Electronic Components Datasheet

SPA06N60C3 Datasheet

CoolMOS Power Transistor

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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
www.DataESxhtereemt4eU.cdovm/dt rated
• Improved transconductance
• Fully isolated package (2500 V AC; 1 minute)
Product Summary
V DS @ T j,max
R DS(on),max
I
1)
D
SPA06N60C3
650 V
0.75
6.2 A
P-TO220-3-31
Type
SPA06N60C3
Package
P-TO220-3-31
Ordering Code
Q67040-S4631
Marking
06N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current1)
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1)
AR
Symbol Conditions
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
E AS I D=3.1 A, V DD=50 V
E AR I D=6.2 A, V DD=50 V
I AR
Drain source voltage slope
dv /dt
I D=6.2 A, V DS=480 V,
T j=125 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V GS static
V GS AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
Rev. 1.0
page 1
Value
6.2
3.9
18.6
200
0.5
6.2
50
±20
±30
32
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2004-04-27


Infineon Technologies Electronic Components Datasheet

SPA06N60C3 Datasheet

CoolMOS Power Transistor

No Preview Available !

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature
www.DataSheet4U.com
T sold
1.6 mm (0.063 in.)
from case for 10 s
SPA06N60C3
min.
Values
typ.
Unit
max.
- - 3.92 K/W
- - 80
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
V (BR)DS V GS=0 V, I D=6.2 A
600
-
-
700
-V
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.26 mA 2.1 3 3.9
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=3.9 A,
T j=25 °C
V GS=10 V, I D=3.9 A,
T j=150 °C
R G f =1 MHz, open drain
g fs
|V DS|>2|I D|R DS(on)max,
I D=3.9 A
-
-
-
-
-
-
-
0.1 1 µA
- 100
- 100 nA
0.68 0.75
1.82 -
1-
5.6 - S
Rev. 1.0
page 2
2004-04-27


Part Number SPA06N60C3
Description CoolMOS Power Transistor
Maker Infineon Technologies AG
Total Page 10 Pages
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