PZTA14
NPN Silicon Darlington Transistor
- For general AF applications
- High collector current
- High current gain
- Pb-free (Ro HS pliant) package
- Qualified according AEC Q101
43 2
Type PZTA14
Marking
Pin Configuration
PZTA14 1=B 2=C 3=E 4=C
- -
Package SOT223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipation TS ≤ 124 °C Junction temperature Storage temperature
Symbol VCES VCBO VEBO IC ICM IB IBM Ptot
Tj Tstg
Value 30 30 10 300 500 100 200 1.5
150 -65 ... 150
Thermal Resistance
Parameter Junction
- soldering point1)
Symbol Rth JS
Value ≤ 17
1For calculation of Rth JA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V m A
W °C
Unit K/W
1 2011-10-04
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values min. typ. max.
DC Characteristics
Col...
