PTF211301A

The PTF211301A is LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz designed by Infineon Technologies AG.

Product Overview

Infineon Technologies AG

Part number	PTF211301A
Manufacturer	Infineon Technologies AG
File Size	449.03 KB
Description	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
Datasheet	PTF211301A_InfineonTechnologiesAG.pdf
Additional preview pages of the PTF211301A datasheet.

The PTF211301 is a 130 W, internally matched GOLDMOS FET intended for WCDMA applications. and two carrier WCDMA operation from 2110 to 2170 MHz.

Broadband internal matching Typical two.
carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion =.
37 dBc - Adjacent channel power =.
42 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P.
1dB = 148 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VS.

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Published: Apr 16, 2005 |