PTF211301A
PTF211301A is LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz manufactured by Infineon.
PTF211301
LDMOS RF Power Field Effect Transistor 130 W, 2110- 2170 MHz
Description
The PTF211301 is a 130- W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two- carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
- - Broadband internal matching Typical two- carrier WCDMA performance at 2140 MHz
- Average output power = 28 W
- Linear Gain = 13.5 d B
- Efficiency = 25%
- Intermodulation distortion =
- 37 d Bc
- Adjacent channel power =
- 42 d Bc Typical CW performance, 2170 MHz, 28 V
- Output power at P- 1d B = 148 W
- Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power
Two- Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 d B, 10 MHz carrier spacing
-30 -35 35 30 Efficiency IM3
- -
Drain Efficiency (%)
IM3 (d Bc), ACPR (d Bc)
-40 -45 -50 -55 -60 36 38
25 20 15 10 5
- -
ACPR 40 42 44 46
Average Output Power (d Bm)
PTF211301A Package 20260
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test- verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.5 A, POUT = 28 W average f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 d B @ 0.01%...
