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PTF210301E Datasheet

Manufacturer: Infineon
PTF210301E datasheet preview

PTF210301E Details

Part number PTF210301E
Datasheet PTF210301E_InfineonTechnologiesAG.pdf
File Size 337.86 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301E page 2 PTF210301E page 3

PTF210301E Overview

The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF210301E Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance
  • Average output power = 7.0 W
  • Gain = 16 dB
  • Efficiency = 25%
  • IM3 = -37 dBc Typical CW performance
  • Output power at P-1dB = 36 W
  • Gain = 15 dB
  • Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • 25 Efficiency 30 25
  • IM3 (dBc), ACPR (dBc)

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