PTF080901E mhz equivalent, ldmos rf power field effect transistor 90 w/ 869-960 mhz.
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* Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at .
in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
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The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
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* Broadband internal matching T.
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