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PTF080601F Datasheet

Manufacturer: Infineon
PTF080601F datasheet preview

PTF080601F Details

Part number PTF080601F
Datasheet PTF080601F Datasheet PDF (Download)
File Size 293.74 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601F page 2 PTF080601F page 3

PTF080601F Overview

The PTF080601 is a 60 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modulation Spectrum Performance Mod Spectrum vs.

PTF080601F Key Features

  • Broadband internal matching Typical EDGE performance
  • Average output power = 30 W
  • Gain = 18 dB
  • Efficiency = 40% Typical CW performance
  • Output power at P-1dB = 90 W
  • Gain = 17 dB
  • Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • Modulation Spectrum (dB)
  • 30 -40 -50 -60 -70 -80 -90
  • Efficiency (%)

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