PTF080601F
Overview
The PTF080601 is a 60-W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
- Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P-1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power
- Modulation Spectrum (dB) -30 -40 -50 -60 -70 -80 -90
- Efficiency (%) * *
- PTF080601A Package 20248 PTF080601E Package 30248 PTF080601F Package 31248 Output Power (dBm) RF Characteristics at TCASE = 25°C unless otherwise indicated Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, fC = 960 MHz, tone spacing = 1000 kHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps η
- IMD Min - - - Typ
