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BFP740 - NPN Silicon Germanium RF Transistor

General Description

The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).

Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industria

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Datasheet Details

Part number BFP740
Manufacturer Infineon Technologies AG
File Size 658.42 KB
Description NPN Silicon Germanium RF Transistor
Datasheet download datasheet BFP740 Datasheet

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BFP740 SiGe:C NPN RF bipolar transistor Product description The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list • Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA • High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA • OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.