BFP740
BFP740 is NPN Silicon Germanium RF Transistor manufactured by Infineon.
description
The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).
Feature list
- Low noise figure NFmin = 0.85 d B at 5.5 GHz, 3 V, 6 m A
- High gain Gms = 19.5 d B at 5.5 GHz, 3 V, 15 m A
- OIP3 = 24.5 d Bm at 5.5 GHz, 3 V, 15 m A
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
- Wireless munications: WLAN, Wi Max and UWB
- Satellite munication systems: GNSS navigation systems (GPS, GLONASS, Bei Dou, Galileo), satellite radio (SDARs, DAB) and C-band LNB
- Multimedia applications such as portable TV, CATV and FM radio
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Device information
Table 1
Part information
Product name / Ordering code BFP740 / BFP740H6327XTSA1
Package SOT343
Pin Configuration
Marking
1 = B 2 = E 3 = C 4 = E R7s
Pieces / Reel 3000
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
.infineon.
Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26
Si Ge:C NPN RF bipolar transistor Table of contents
Table of contents
Product description
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Feature list
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