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Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPP07N60S5 SPI07N60S5
VDS RDS(on)
ID
600 V 0.6 Ω 7.3 A
PG-TO262 PG-TO220
2
P-TO220-3-1
123
Type SPP07N60S5 SPI07N60S5
Package PG-TO220 PG-TO262
Ordering Code Q67040-S4172 Q67040-S4328
Marking 07N60S5
07N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = - A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 7.
SPI07N60S5 Datasheet
