Click to expand full text
SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
P-TO220-3-1
VDS RDS(on) ID
P-TO262 P-TO263-3-2
600 0.38 11
V Ω A
P-TO220-3-1
2
1
23
Type
Package
Ordering Code
SPP11N60S5 SPB11N60S5 SPI11N60S5
Maximum Ratings Parameter
P-TO220-3-1 P-TO263-3-2 P-TO262
Q67040-S4198 Q67040-S4199 Q67040-S4338
Marking 11N60S5 11N60S5 11N60S5
Symbol
ID
Value 11 7
Unit A
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = 5.5 A, VDD = 50 V
I D puls EAS
22 340 0.
SPB11N60S5 Datasheet
