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PTFB241402F - High Power RF LDMOS Field Effect Transistor

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Infineon Technologies

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PTFB241402F High Power RF LDMOS Field Effect Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – PTFB241402F

Datasheet Details

Part number	PTFB241402F
Manufacturer	Infineon Technologies
File Size	439.18 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFB241402F Datasheet
Additional preview pages of the PTFB241402F datasheet.

Product details

Description

The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package.

Features

Broadband internal matching.
Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55%.
Increased negative gate-source voltage range for improved performance in Doherty amplifiers.
Integrated ESD protection.
Excellent thermal stability.

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Published: Jun 9, 2014 |