PTFB241402F transistor equivalent, high power rf ldmos field effect transistor.
* Broadband internal matching
* Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55%
* Increased negative gate-so.
in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellen.
The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excelle.
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