IPP90R1K2C3 Datasheet | Infineon

Features - Lowest figure-of-merit RON x Qg - Extreme dv/dt rated - High peak current capability - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant - Ultra low gate charge Cool MOS™ 900V is designed for: - Quasi Resonant Flyback / Forward topologies - PC Silverbox and consumer applications - Industrial SMPS Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 V 1.2 Ω 28 n C PG-TO220 Type IPP90R1K2C3 Package PG-TO220 Marking 9R1K2C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current 2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t AR 2),3) Avalanche current, repetitive t AR 2),3) MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=0.92 A, V DD=50 V I D=0.92 A, V DD=50 V V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T J, T stg Mounting torque M3 and M3.5 screws Rev. 1.0 page 1 Value 5.1 3.2 10 68 0.31 0.92 50 ±20 ±30 83 -55 ... 150 60 Unit A m J A V/ns...