The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Type
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant
Type
IPD170N04N G
Product Summary V DS R DS(on),max ID
IPD170N04N G
40 V 17 mΩ 30 A
Package Marking
PG-TO252-3 170N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22
ID
I D,pulse I AS E AS V GS
V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C T C=25 °C T C=
IPD170N04NG Datasheet
