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IPD082N10N3G Datasheet, Infineon Technologies

IPD082N10N3G power-transistor equivalent, power-transistor.

IPD082N10N3G Avg. rating / M : 1.0 rating-11

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IPD082N10N3G Datasheet

Features and benefits


* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free .

Image gallery

IPD082N10N3G Page 1 IPD082N10N3G Page 2 IPD082N10N3G Page 3

TAGS

IPD082N10N3G
Power-Transistor
IPD082N10N3
IPD088N04LG
IPD088N06N3
Infineon Technologies

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