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IPD068N10N3G Datasheet, Infineon Technologies

IPD068N10N3G power-transistor equivalent, power-transistor.

IPD068N10N3G Avg. rating / M : 1.0 rating-12

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IPD068N10N3G Datasheet

Features and benefits


* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C.

Image gallery

IPD068N10N3G Page 1 IPD068N10N3G Page 2 IPD068N10N3G Page 3

TAGS

IPD068N10N3G
Power-Transistor
IPD068N10N3
IPD068P03L3
IPD068P03L3G
Infineon Technologies

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