IPB60R385CP transistor equivalent, power transistor.
* Lowest figure-of-merit R ON x Qg
* Ultra low gate charge
* High peak current capability
* Qualified according to JEDEC1) for target applications
* P.
* Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.385 Ω 17 nC
PG-.
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