IPB100N04S2-04 Datasheet | Infineon

.. IPB100N04S2-04 IPP100N04S2-04 Opti MOS® Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 40 3.3 100 V mΩ A PG-TO263-3-2 PG-TO220-3-1 Type IPB100N04S2-04 IPP100N04S2-04 Package PG-TO263-3-2 PG-TO220-3-1 Ordering Code SP0002-19061 SP0002-19056 Marking PN0404 PN0404 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=80A Value 100 100 400 810 ±20 300 -55 ... +175 m J V W °C Unit A Rev. 1.0 page 1 2006-03-02 .. IPB100N04S2-04 IPP100N04S2-04 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 m A V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version 40 2.1 3.0 4.0 V 0.5 62 62 40 K/W Values typ. max. Unit Zero gate voltage drain current I DSS -...