IPB06N03LAG
IPB06N03LAG is Power-Transistor manufactured by Infineon.
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IPB06N03LA G
OptiMOS®2 Power-Transistor
Features
- Ideal for high-frequency dc/dc converters
- Qualified according to JEDEC1) for target applications
- N-channel
- Logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Superior thermal resistance
- 175 °C operating temperature
- dv /dt rated
- Pb-free lead plating; RoHS pliant
Product Summary V DS R DS(on),max (SMD version) ID 25 5.9 50 V mΩ A
PG-TO263-3-2
Type IPB06N03LA G
Package PG-TO263-3-2
Marking 06N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current...