IPB039N04LG
IPB039N04LG is Power-Transistor manufactured by Infineon.
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC1) for target applications
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 100% Avalanche tested
- Pb-free plating; Ro HS pliant
- Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
Type
IPB039N04L G
IPP039N04L G
IPP039N04L G IPB039N04L G
40 V 3.9 mΩ 80 A
Package Marking
PG-TO263-3 039N04L
PG-TO220-3 039N04L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
I D,pulse I AS E AS V GS
V GS=4.5 V, T C=100 °C T C=25 °C
T C=25 °C
I D=80 A, R GS=25 Ω
Rev. 1.2 page 1
Value
Unit
60 m J
±20
2009-12-17...
