IDW16G65C5 diodes equivalent, sic schottky barrier diodes.
* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independe.
* Breakdown voltage tested at 35 mA2)
* Optimized for high temperature operation
Benefits
* System efficienc.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resultin.
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