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3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark
• No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF
Product Summary VDC QC IF; TC< 130 °C
IDH03SG60C
600 V 3.2 nC 3A
thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.
IDH03SG60C Datasheet
